SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3聳 FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FZT753
FZT653
C
E
FZT653
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
SYMBOL MIN.
120
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
70
100
55
25
140
0.13
0.23
0.9
0.8
200
200
110
55
175
100
5
0.1
10
0.1
0.3
0.5
1.25
1.0
300
MHz
30
80
1200
pF
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
120
100
5
6
2
2
-55 to +150
UNIT
V
V
V
碌
A
碌
A
碌
A
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=100V
V
CB
=100V,
T
amb
=100擄C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
V
V
V
V
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse Width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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