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2sk1762 Datasheet

  • 2sk1762

  • Silicon NPN Triple Diffused

  • hitachi

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2SK1762
Electrical Characteristics
(Ta = 25擄C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
250
鹵30
鈥?/div>
鈥?/div>
2.0
鈥?/div>
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.23
8.0
1100
440
68
20
65
100
44
1.0
200
Max
鈥?/div>
鈥?/div>
鹵10
250
3.0
0.35
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
V
V
碌A(chǔ)
碌A(chǔ)
V
鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 12 A, V
GS
= 0
I
F
= 12 A, V
GS
= 0,
di
F
/ dt = 100 A /
碌s
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
鹵100 碌A(chǔ),
V
DS
= 0
V
GS
=
鹵25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V*
1
I
D
= 6 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 5
鈩?/div>
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
See characteristic curves of 2SK1761.
3

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