Philips Semiconductors
TEA5767HN
Low-power FM stereo radio for handheld applications
Table 31. DC operating points, unloaded DC voltage
鈥ontinued
V
CCA
= V
VCOTANK1
= V
VCOTANK2
= V
CCD
= 2.7 V; T
amb
= 25
擄
C; unless otherwise speci鏗乪d.
Operating Conditions
point
V
PILFIL
V
AFL
V
AFR
V
TMUTE
V
MPXO
V
ref
V
TIFC
V
LIMDEC1
V
LIMDEC2
V
Igain
V
RFI1
V
RFI2
V
TAGC
V
RF
= 0 V
f
RF
= 98 MHz; V
RF
= 1 mV
f
RF
= 98 MHz; V
RF
= 1 mV
V
RF
= 0 V
f
RF
= 98 MHz; V
RF
= 1 mV
Min
0.65
720
720
1.5
680
1.45
1.34
1.86
1.86
480
0.93
0.93
1
Typ
0.9
850
850
1.65
815
1.55
1.44
1.98
1.98
530
1.03
1.03
1.57
Max
1.3
940
940
1.8
950
1.65
1.54
2.1
2.1
580
1.13
1.13
2
Unit
V
mV
mV
V
mV
V
V
V
V
mV
V
V
V
13. Dynamic characteristics
Table 32. Dynamic characteristics
V
CCA
= V
VCOTANK1
= V
VCOTANK2
= V
CCD
= 2.7 V; T
amb
= 25
擄
C; measured in the circuit of
Figure 13;
AC values are given in
RMS; for V
RF
the EMF value is given; unless otherwise speci鏗乪d.
Symbol
f
osc
Parameter
oscillator frequency
Conditions
Min
150
Typ
-
Max
217
Unit
MHz
Voltage controlled oscillator
Crystal oscillator
Circuit input: pin XTAL2
V
i(osc)
R
i
oscillator input voltage
input resistance
oscillator externally clocked
oscillator externally clocked
data byte 4 bit 4 = 0
data byte 4 bit 4 = 1
C
i
input capacitance
oscillator externally clocked
data byte 4 bit 4 = 0
data byte 4 bit 4 = 1
Crystal: 32.768 kHz
f
r
鈭唂/f
r
C
0
R
S
鈭唂
r
/f
r(25
擄C)
f
r
series resonance
frequency
frequency deviation
shunt capacitance
series resistance
temperature drift
series resonance
frequency
鈭?0 擄C
< T
amb
< +60
擄C
data byte 4 bit 4 = 0
data byte 4 bit 4 = 1
-
32.768
-
+20
脳
10
鈭?
3.5
80
+50
脳
10
鈭?
-
MHz
pF
k鈩?/div>
kHz
3.9
5
5.6
6
7.3
7
pF
pF
2
230
3
330
4
430
k鈩?/div>
k鈩?/div>
140
-
350
mV
鈭?0 脳
10
鈭?
-
-
-
-
-
鈭?0 脳
10
鈭?
-
-
13
Crystal: 13 MHz
TEA5767HN_4
漏 Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 04 鈥?20 February 2006
24 of 39
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