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TEA5767HN Datasheet

  • TEA5767HN

  • Low-power FM stereo radio

  • Philips

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Philips Semiconductors
TEA5767HN
Low-power FM stereo radio for handheld applications
Table 32. Dynamic characteristics
鈥ontinued
V
CCA
= V
VCOTANK1
= V
VCOTANK2
= V
CCD
= 2.7 V; T
amb
= 25
擄
C; measured in the circuit of
Figure 13;
AC values are given in
RMS; for V
RF
the EMF value is given; unless otherwise speci鏗乪d.
Symbol
TC
de-em
Parameter
de-emphasis time
constant
Conditions
V
RF
= 1 mV
data byte 5 bit 6 = 0
data byte 5 bit 6 = 1
V
RF
= 1
碌V
data byte 5 bit 6 = 0
data byte 5 bit 6 = 1
Mono to stereo blend control
偽
cs(stereo)
stereo channel separation V
RF
= 45
碌V;
R = L = 0 or
R = 0 and L = 1 including 9 %
pilot;
鈭唂
= 75 kHz; f
mod
= 1 kHz;
data byte 3 bit 3 = 0;
data byte 4 bit 1 = 1
stereo channel separation
switching from mono to
stereo with increasing RF
input level
R = L = 0 or R = 0 and L = 1
including 9 % pilot;
鈭唂
= 75 kHz; f
mod
= 1 kHz;
data byte 3 bit 3 = 0;
data byte 4 bit 1 = 0
V
RF
= 1 mV
V
RF
= 20
碌V
Bus-driven mute functions
24
-
-
-
-
1
dB
dB
4
10
16
dB
114
171
150
225
186
279
碌s
碌s
38
57
50
75
62
93
碌s
碌s
Min
Typ
Max
Unit
High cut control
Mono to stereo switched
偽
cs(stereo)
Tuning mute
偽
mute
偽
mute(L)
偽
mute(R)
V
AFL
and V
AFR
muting
depth
V
AFL
muting depth
V
AFR
muting depth
data byte 1 bit 7 = 1
data byte 3 bit 1 = 1;
f
AF
= 1 kHz; R
load(L)
< 30 k鈩?/div>
data byte 3 bit 2 = 1;
f
AF
= 1 kHz; R
load(R)
< 30 k鈩?/div>
-
-
-
-
-
-
鈭?0
鈭?0
鈭?0
dB
dB
dB
[1]
Calculation of this 14-bit word can be done as follows:
formula for high side injection:
where:
N = decimal value of PLL word;
f
RF
= the wanted tuning frequency [Hz];
f
IF
= the intermediate frequency [Hz] = 225 kHz;
f
ref
= the reference frequency [Hz] = 32.768 kHz for the 32.768 kHz crystal; f
ref
= 50 kHz for the 13 MHz crystal or when externally
clocked with 6.5 MHz.
Example for receiving a channel at 100 MHz with high side injection:
The PLL word becomes 2FCAh.
4
脳 (
f
RF
+
f
IF
)
4
脳 (
f
RF
鈥?/div>
f
IF
)
N
=
--------------------------------------
; formula for low side injection:
N
=
--------------------------------------
-
-
f
ref
f
ref
4
脳 (
100
脳
10
+
225
脳
10
)
N
=
-------------------------------------------------------------------
=
12234
-
32768
6
3
[2]
[3]
V
RF
in
Figure 13
is replaced by V
RF1
+ V
RF2
. The radio is tuned to 98 MHz (high side injection).
Low side and high side selectivity can be switched by changing the mixer from high side to low side LO injection.
漏 Koninklijke Philips Electronics N.V. 2006. All rights reserved.
TEA5767HN_4
Product data sheet
Rev. 04 鈥?20 February 2006
29 of 39

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