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PDTC143TT Datasheet

  • PDTC143TT

  • NPN resistor-equipped transistor

  • 51.62KB

  • Philips

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Philips Semiconductors
Product speci鏗乧ation
NPN resistor-equipped transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
擄C
unless otherwise speci鏗乪d.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
input resistor
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
擄C
I
C
= 0; V
EB
= 5 V
I
C
= 1 mA; V
CE
= 5 V
I
C
= 5 mA; I
B
= 0.25 mA
MIN.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
200
鈭?/div>
3.3
鈭?/div>
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
鈮?/div>
25
擄C;
note 1
CONDITIONS
open emitter
open base
open collector
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?5
鈭?/div>
鈭?5
MIN.
PDTC143TT
MAX.
50
50
5
100
100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mW
擄C
擄C
擄C
UNIT
K/W
TYP.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
4.7
鈭?/div>
MAX.
100
1
50
100
鈭?/div>
100
6.1
2.5
UNIT
nA
碌A(chǔ)
碌A(chǔ)
nA
mV
k鈩?/div>
pF
1999 May 21
3

PDTC143TT 產(chǎn)品屬性

  • 4.7 k

  • 表面貼裝

  • 1.4mm

  • TO-236AB

  • 3 x 1.4 x 1mm

  • 3

  • NPN

  • -65 °C

  • 5 V

  • 100 mA

  • 50 V

  • 0.1 V

  • 200

  • +150 °C

  • 單

  • 3mm

  • 1mm

PDTC143TT相關(guān)型號PDF文件下載

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    PHILIPS [P...
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    NPN resistor-equipped transistor
    PHILIPS [P...
  • 英文版
    NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
    PHILIPS
  • 英文版
    NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
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    NPN resistor-equipped transistor
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