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BT139 Datasheet

  • BT139

  • Philips Semiconductors [Triacs high noise immunity]

  • PHILIPS

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Philips Semiconductors
Product specification
Triacs
BT139 series
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 藲C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
BT139-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 藲C
V
D
= V
DRM(max)
;
T
j
= 125 藲C
MIN.
TYP.
...
-
-
-
-
-
-
-
-
-
-
-
0.25
-
5
8
10
22
7
20
8
10
6
1.2
0.7
0.4
0.1
35
35
35
70
40
60
40
60
30
MAX.
...F
25
25
25
70
40
60
40
60
30
1.6
1.5
-
0.5
...G
50
50
50
100
60
90
60
90
60
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 藲C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
BT139-
V
DM
= 67% V
DRM(max)
;
T
j
= 125 藲C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 藲C;
I
T(RMS)
= 16 A;
dI
com
/dt = 7.2 A/ms; gate
open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/碌s
...
100
MIN.
...F
50
...G
200
TYP.
250
MAX.
-
UNIT
V/碌s
dV
com
/dt
-
-
10
20
-
V/碌s
t
gt
-
-
-
2
-
碌s
September 1997
2
Rev 1.200

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