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BUK9225-55A Datasheet

  • BUK9225-55A

  • Philips Semiconductors [TrenchMOS logic level]

  • PHILIPS

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Philips Semiconductors
BUK9225-55A
TrenchMOS鈩?logic level FET
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
mb
= 25
擄C;
V
GS
= 5 V
T
mb
= 25
擄C
T
j
= 25
擄C;
V
GS
= 5 V; I
D
= 25 A
T
j
= 25
擄C;
V
GS
= 4.5 V; I
D
= 25 A
T
j
= 25
擄C;
V
GS
= 10 V; I
D
= 25 A
Typ
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
21
鈭?/div>
19
Max
55
43
94
175
25
27
22
Unit
V
A
W
擄C
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
m
鈩?/div>
m
鈩?/div>
m
鈩?/div>
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
擄C;
V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
擄C;
V
GS
= 5 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
W
DSS
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
擄C
T
mb
= 25
擄C;
pulsed; t
p
鈮?/div>
10
碌s
unclamped inductive load; I
D
= 43 A;
V
DS
鈮?/div>
55 V; V
GS
= 5 V; R
GS
= 50
鈩?
starting T
j
= 25
擄C
T
mb
= 25
擄C;
pulsed; t
p
鈮?/div>
10
碌s;
Figure 3
T
mb
= 25
擄C;
Figure 1
[1]
Conditions
R
GS
= 20 k鈩?/div>
Min
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?5
鈭?5
鈭?/div>
鈭?/div>
鈭?/div>
Max
55
55
鹵15
43
30
173
94
+175
+175
43
173
123
Unit
V
V
V
A
A
A
W
擄C
擄C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
I
DM
is limited by chip, not package.
9397 750 08134
漏 Philips Electronics N.V. 2001. All rights reserved.
Product speci鏗乧ation
Rev. 01 鈥?17 April 2001
2 of 13

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