AAT3197IDB-T AAT3194ITP-20-T1 AAT3193IJQ-1-T1 AAT3192IJQ-1-T1 AAT3190ITP-T1 AAT3190ITP-1-T1 AAT3190IKS-T1 AAT3175IWP-T1 AAT3175IWP AAT3174IWP-T1 AAT3200IGY-1.8-T1
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LD0、QLDO、VLDO的設(shè)計原理及測試
...流,而靜態(tài)工作電流僅為10mA。QLDO也需要接輸出電容,但其容量可比LDO用得小,對電容的等效串聯(lián)電阻(ESR)要求較低。 2 VLDO的設(shè)計原理 VLDO的設(shè)計原理如圖4所示,典型產(chǎn)品為Analogic TECH公司的AAT3200。VLD0的最大特點是采用P溝道功率場效應(yīng)管MOSFET來代替PNP型功率管作為調(diào)整管,MOSFET本身還帶保護二極管(VD)。P溝道MOSFET屬于電壓控制型器件,其柵極驅(qū)動電流板小,而通態(tài)電阻非常低,...
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AAT3200IGY-2.5-T1AAT3200IGY-2.8-T1AAT3200IGY-3.0-T1AAT3200IGY-3.3-T1AAT3200IQY-1.8-T1AAT3200IQY-2.0-T1AAT3200IQY-2.5-T1AAT3200IQY-2.85-T1AAT3200IQY-2.8-T1AAT3200IQY-3.0-T1AAT3200IQY-3.3-T1AAT3200IQY-3.5-T1AAT3201AAT3201IGV-1.8-T1AAT3201IGV-2.5-T1AAT3201IGV-2.7-T1AAT3201IGV-2.85-T1AAT3201IGV-2.8-T1
