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2SC5432 Datasheet

  • 2SC5432

  • NEC [NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LO...

  • NEC   NEC

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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5432
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
鈥?Ultra super mini-mold thin flat package
(1.4 mm
脳
0.8 mm
脳
0.59 mm: TYP.)
鈥?Contains same chip as 2SC5006
PACKAGE DIMENSIONS (in mm)
1.4 鹵 0.05
0.8 鹵 0.1
1.4 鹵 0.1
(0.9)
0.45 0.45
0.2
+0.1
鈥?
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
20
12
3
100
125
150
鈥?5 to +150
UNIT
V
V
TC
3
1
0.59 鹵 0.05
V
mA
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
7.0
80
3.0
MIN.
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
TYP.
MAX.
1000
1000
145
UNIT
nA
nA
4.5
0.7
10.0
1.4
2.5
1.5
GHz
pF
dB
dB
Notes 1.
Pulse measurement P
W
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13076EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
漏
0.15
+0.1
鈥?.05
0.3
+0.1
鈥?
2
1998

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