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3MBI150U-120 Datasheet

  • 3MBI150U-120

  • 1200V / 150A 3 in one-package

  • 5頁

  • FUJI

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3MBI150U-120
IGBT Module U-Series
Features
路 High speed switching
路 Voltage drive
路 Low inductance module structure
1200V / 150A 3 in one-package
Applications
路 Inverter for Motor drive
路 AC and DC Servo drive amplifier
路 Uninterruptible power supply
路 Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25擄C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
P
C
T
j
T
stg
V
iso
1 device
Conditions
Rating
1200
鹵20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
W
擄C
VAC
N路m
Unit
V
V
A
Continuous Tc=25擄C
1ms
Tc=80擄C
Tc=25擄C
Tc=80擄C
AC:1min.
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : 2.5 to 3.5 N路m(M5)
Electrical characteristics (at Tj=25擄C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
Reverse recovery time
Lead resistance, terminal-chip*3
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=鹵20V
V
CE
=20V, I
C
=150mA
V
GE
=15V, I
C
=150A
Tj=25擄C
Tj=125擄C
Tj=25擄C
Characteristics
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6.5
2.15
2.40
1.75
2.00
17
0.36
0.21
0.03
0.37
0.07
2.00
2.10
1.60
1.70
鈥?/div>
2.4
Unit
Max.
1.0
200
8.5
2.50
鈥?/div>
2.10
鈥?/div>
鈥?/div>
1.20
0.60
鈥?/div>
1.00
0.30
2.30
鈥?/div>
1.90
鈥?/div>
0.35
鈥?/div>
碌s
m鈩?/div>
mA
nA
V
V
Input capacitance
Turn-on time
Tj=125擄C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=鹵15V
R
G
=2.2
鈩?/div>
V
GE
=0V
I
F
=150A
Tj=25擄C
Tj=125擄C
Tj=25擄C
Tj=125擄C
I
F
=150A
nF
碌s
Turn-off time
Forward on voltage
V
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.05
Unit
Max.
0.17
0.28
鈥?/div>
擄C/W
擄C/W
擄C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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