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Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 33L2800 5STP 33L2600 5STP 33L2200
Conditions
2800 V
3000 V
2600 V
2800 V
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400 mA
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400 mA
1000 V/碌s
2200 V
2400 V
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DRM
V
RRM
T
j
= 125擄C
Exp. to 0.67 x V
DRM
, T
j
= 125擄C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
1.45 kg
36 mm
15 mm
70 kN
63 kN
84 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
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