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BSC072N025S Datasheet

  • BSC072N025S

  • Infineon Technologies AG [OptiMOS㈢2 Power-Transistor]

  • INFINEON   INFINEON

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BSC072N025S G
OptiMOS
廬
2 Power-Transistor
Features
鈥?Fast switching MOSFET for SMPS
鈥?Optimized technology for notebook DC/DC converters
鈥?Qualified according to JEDEC
1
for target applications
鈥?Logic level / N-channel
鈥?Excellent gate charge x
R
DS(on)
product (FOM)
鈥?Very low on-resistance
R
DS(on)
鈥?Superior thermal resistance
鈥?Avalanche rated
鈥?dv /dt rated
鈥?Pb-free lead plating; RoHS compliant
Type
BSC072N025S G
Package
PG-TDSON-8
Marking
72N025S
Product Summary
V
DS
R
DS(on),max
I
D
25
7.2
40
V
m鈩?/div>
A
PG-TDSON-8
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 擄C
T
C
=100 擄C
T
A
=25 擄C,
R
thJA
=45 K/W
2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
C
=25 擄C
T
A
=25 擄C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 0.94
page 1
T
j
,
T
stg
T
C
=25 擄C
3)
I
D
=40 A,
R
GS
=25
鈩?/div>
I
D
=40 A,
V
DS
=24 V,
di /dt =200 A/碌s,
T
j,max
=150 擄C
Value
40
40
15
160
160
6
鹵20
60
2.8
-55 ... 150
55/150/56
2006-05-10
擄C
mJ
kV/碌s
V
W
Unit
A

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