ON Semiconductort
JFET Chopper Transistor
N鈥揅hannel 鈥?Depletion
J112
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Gate鈥揝ource Voltage
Gate Current
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Lead Temperature
Operating and Storage Junction
Temperature Range
Symbol
V
DG
V
GS
I
G
P
D
T
L
T
J
, T
stg
Value
鈥?5
鈥?5
50
350
2.8
300
鈥?5 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 5
TO鈥?2 (TO鈥?26AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
2 SOURCE
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage
(I
G
= 鈥?.0
碌A(chǔ)dc)
Gate Reverse Current
(V
GS
= 鈥?5 Vdc)
Gate Source Cutoff Voltage
(V
DS
= 5.0 Vdc, I
D
= 1.0
碌A(chǔ)dc)
Drain鈥揅utoff Current
(V
DS
= 5.0 Vdc, V
GS
= 鈥?0 Vdc)
V
(BR)GSS
I
GSS
V
GS(off)
I
D(off)
35
鈥?/div>
鈥?.0
鈥?/div>
鈥?/div>
鈥?.0
鈥?.0
1.0
Vdc
nAdc
Vdc
nAdc
ON CHARACTERISTICS
Zero鈥揋ate鈥揤oltage Drain Current
(1)
(V
DS
= 15 Vdc)
Static Drain鈥揝ource On Resistance
(V
DS
= 0.1 Vdc)
Drain Gate and Source Gate On鈥揅apacitance
(V
DS
= V
GS
= 0, f = 1.0 MHz)
Drain Gate Off鈥揅apacitance
(V
GS
= 鈥?0 Vdc, f = 1.0 MHz)
Source Gate Off鈥揅apacitance
(V
GS
= 鈥?0 Vdc, f = 1.0 MHz)
1. Pulse Width = 300
碌s,
Duty Cycle = 3.0%.
I
DSS
r
DS(on)
C
dg(on)
+
C
sg(on)
C
dg(off)
C
sg(off)
5.0
鈥?/div>
鈥?/div>
鈥?/div>
50
28
mAdc
鈩?/div>
pF
鈥?/div>
鈥?/div>
5.0
5.0
pF
pF
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
J112/D
J112/D相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
下載
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