鈥?/div>
Complement to KSB564A
Collector Current : I
C
=1A
Collector Power Dissipation : P
C
=800mW
Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
30
5
1
800
150
-55 ~ 150
Units
V
V
V
A
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain BandWidth Product
Output Capacitance
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=30V, I
E
=0
V
CE
=1V, I
C
=100mA
I
C
=1A, I
B
=0.1A
I
C
=1A, I
B
=0.1A
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
130
16
120
Min.
40
30
5
0.1
400
0.5
1.2
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
碌A(chǔ)
h
FE
Classification
Classification
h
FE
Y
120 ~ 240
G
200 ~ 400
漏2004 Fairchild Semiconductor Corporation
Rev. B3, April 2004