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MBRS1100 Datasheet

  • MBRS1100

  • Motorola, Inc [Schottky Power Rectifier(Surface Mount Power...

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRS1100T3/D
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in
a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for low voltage, high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state-of-the-art devices have the
following features:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage 鈥?100 Volts
150擄C Operating Junction Temperature
Guardring for Stress Protection
鈩?/div>
Data Sheet
MBRS1100T3
Motorola Preferred Device
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
Mechanical Characteristics
鈥?/div>
Case: Epoxy, Molded
鈥?/div>
Weight: 95 mg (approximately)
鈥?/div>
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
鈥?/div>
Lead and Mounting Surface Temperature for Soldering Purposes: 260擄C
Max. for 10 Seconds
鈥?/div>
Shipped in 12 mm Tape and Reel, 2500 units per reel
鈥?/div>
Polarity: Notch in Plastic Body Indicates Cathode Lead
鈥?/div>
Marking: B110
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 120擄C
TL = 100擄C
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ
dv/dt
CASE 403A鈥?3
Value
100
Unit
Volts
1.0
2.0
50
鈥?65 to +150
10
Amps
Amps
擄C
V/ns
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Voltage Rate of Change
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Lead (TL = 25擄C)
R
胃JL
22
擄C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25擄C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25擄C)
(Rated dc Voltage, TJ = 100擄C)
(1) Pulse Test: Pulse Width = 300
碌s,
Duty Cycle
鈮?/div>
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
VF
iR
0.75
Volts
mA
0.5
5.0
Rev 2
漏
Rectifier
Inc. 1996
Data
Motorola,
Device
1

MBRS1100相關(guān)型號PDF文件下載

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